The Talos F200X 200keV field emission scanning/transmission electron microscope is a versatile instrument for characterization of various materials. The X-FEG high-brightness electron source delivers high total current—up to five times the beam current of a standard Schottky FEG—while the integrated EDS system with four silicon drift detectors (SDDs) offers mapping capabilities of up to 105 spectra/s.

Different capabilities of TEM:

  • Electron diffraction (SAED, CBED)
  • Conventional transmission electron microscopy (characterization of defects in crystals)
  • High-resolution transmission electron microscopy (HRTEM, point resolution 0.12 nm)
  • High-angle annular dark field scanning transmission electron microscopy (HAADF-STEM, 0.19 nm lateral resolution)
  • Energy dispersive X-ray analysis

a) Dislocation arrangement in 3D-printed Inconel
b) Atomic structure of a precipitate in NiTiHf alloy

EDX chemical mapping of 3D-printed Inconel 718 using STEM/EDX technique

 

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